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Thomas Library

Honors Thesis Archive

Author Lydia Kisley
Title Integration of Gallium Nitride Nanowires with Nanofabricated Silicon Circuits
Department Chemistry
Advisors David Finster, Ray Dudek, and Dan Fleisch
Year 2010
Honors Departmental Honors
Full Text View Thesis (1218 KB) Note: This is a very large file; it may be easier to download the file to your computer and open it from there.
Abstract This project successfully demonstrated that GaN nanowires can be integrated into silicon circuits. Basic silicon circuits were designed and fabricated, containing p-MOSFETs and specific contact areas where nanowires could be deposited. GaN nanowires were aligned to the contacts by dielectrophoresis and contacted with an additional metal layer. Optical and scanning electron microscope images and current-voltage measurements were taken to image and test the devices. The transistors were shown to have an 85% working rate and the nanowires functioned in the circuit as diodes when correctly aligned.

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